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Samsung Electronics (KOSE:A005930) Unveils 400 Layer V10 BV NAND For AI Infrastructure - simplywall.stsimplywall.st · Fri, 07 Aug 2026 19:48:24 GMTSamsung, POSTECH Crack Key Technology for Ultra-High-Layer NAND - Seoul Economic DailySeoul Economic Daily · Fri, 07 Aug 2026 06:11:08 GMTSamsung unveils 400-Layer V-NAND and next-generation AI memory technologies - New ElectronicsNew Electronics · Thu, 06 Aug 2026 07:53:45 GMTSamsung reveals next-gen memory with stacked HBM and 400-layer NAND - TechSpotTechSpot · Wed, 05 Aug 2026 18:17:00 GMTSamsung Tackles the Memory & Storage Wall With 400+ Layer “Hybrid Bonded” V10 BV-NAND & zHBM That Stacks HBM Directly On Top of AI Chips - WccftechWccftech · Wed, 05 Aug 2026 16:50:04 GMTSamsung unveils V10 BV-NAND with wafer bonding and 400 layers - techzine.eutechzine.eu · Wed, 05 Aug 2026 12:27:55 GMTSamsung debuts next-gen memory chips for AI systems - Korea JoongAng DailyKorea JoongAng Daily · Wed, 05 Aug 2026 07:48:34 GMT[News] Samsung Unveils Industry-First 400+ Layer V10 BV-NAND; Memory Density Up 58% vs. V9 - TrendForceTrendForce · Wed, 05 Aug 2026 04:09:03 GMT